symbol 1n914 1n4148 1n4150 1N4151 1n4154 1n4448 1n4454 units maximum recurrent peak reverse voltage v rrm 100 100 50 75 35 100 75 v maximum average rectified current io 75 150 200 150 150 150 150 ma maximum power dissipation t amb=25 o c ptot 250 500 500 500 500 500 500 mw maximum forward voltage v f 1.0/10 1.0/10 1.0/200 1.0/50 1.0/30 1.0/100 1.0/10 v/ma maximum reverse current i r 5000/75 5000/75 100/50 50/50 100/25 5000/75 100/10 na/v maximum reverse recovery time trr 4.0 4.0 4.0 2.0 2.0 4.0 4.0 ns typical junction capacitance c j 4.0 pf operating and storage t emperature range t j ,t stg -65 to + 200 o c maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. 1n914 thru dimensions in millimeters rectifier specialists r dc components co., l td. 0.52? 2.0max 25.0min l 25.0min note: 1-1n914a, 1n914b is same as 1n914, except different in forward voltage: 1n914a-1.0/20 v/ma 1n914b-1.0/100 v/ma 2.suffix "m" stands for "do-34" package.(e.g.:1n4148m) technical specifica tions of high speed switching diodes vol t age range -50 to 100 v olts current - 0.075 to 0.2 ampere features * silicon epitaxial planar diodes * low leakage * low forward voltage * high speed switching * high current capability * high reliability mechanical data * case: glass sealed case * lead: mil-std-202e, method 208 guaranteed * polarity: color band denotes cathode end * mounting position: any * weight: 0.13 gram * low power loss, high efficiency 1n 1n 4148 4454 do-34 / do-35 do-34 2.9 max do-35 4.2 max l: 98
dc components co., ltd. &7 &, )=&&)<) ) < mn
=
/
2
2*
2 &
% *
% * % * * * * * * * &( ." - - '!+( -" (!
8
8
8%
8*
8
1 1 /- 3 /" 3'- - 1!+( > 1
%
*
8*
8 &
* 1 p/
! )qp/* ! ) ,4 '!+( '!+( ' 1 w
%
*
* * * *
8*
8
* & p/* ! ) '/ =? " - !"# )!m n )!m n p/* ! ) '/ =? 2 2
2
2
2$
*
9
&( ." -!+ ( -! . -
$
9
*
*
! . ! ) 0 <1k
-
|
